Assignment of Assignor's Interest

Recorded: 2005-12-30 Pages: 3

Assignor

LIM, TAE HONG

Executed: 2005-12-26

Assignee

DONGBUANAM SEMICONDUCTOR INC.

891-10, DAECHI-DONG, GANGNAM-GU, SEOUL 135-280, KOREA, REPUBLIC OF

Covered Property (1)

Wafer surface pre-treatment with hydrogen for gate oxide formation

Application: 11/320,614 →

Publication: US 2006/0148223

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.