Patent Assignment
Reel/Frame 017776/0759
Nunc Pro Tunc Assignment
Recorded: 2006-06-14
Received: 2006-06-14
Pages: 6
Assignor
ACTRANS SYSTEM INCORPORATION, USA
Executed: 2006-05-31
Assignee
SILICON STORAGE TECHNOLOGY, INC.
1171 SONORA COURT, SUNNYVALE, CA, 94086, UNITED STATES
Covered Properties
(10)
Process of Fabricating Flash Memory with Enhanced Program and Erase Coupling
Application:
11/380,595 →
Self-Aligned Split-Gate Nand Flash Memory and Fabrication Process
Application:
11/281,182 →
Semiconductor Memory and Method of Storing Configuration Data
Application:
11/063,316 →
NAND flash memory with densely packed memory gates and fabrication process
Application:
10/900,413 →
Nand Flash Memory with Nitride Charge Storage Gates and Fabrication Process
Application:
10/869,475 →
Flash Memory with Enhanced Program and Erase Coupling and Process of Fabricating the Same
Application:
10/802,253 →
Self-Aligned Split-Gate Nand Flash Memory and Fabrication Process
Application:
10/803,183 →
NAND flash memory with enhanced program and erase performance, and fabrication process
Application:
10/753,103 →
Flash Memory Cell with Contactless Bit Line, and Process of Fabrication
Application:
09/862,078 →
Memory Cell with Self-Aligned Floating Gate and Separate Select Gate, and Fabrication Process
Application:
09/768,984 →