Patent Assignment
Reel/Frame 017817/0208
Assignment of Assignor's Interest
Recorded: 2006-04-25
Pages: 3
Assignee
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
398, HASE ATSUGI-SHI, KANAGAWA-KEN, 243-0036, JAPAN
Covered Property
(1)
Method of Forming Gate Insulating Film for Thin Film Transistors Using Plasma Oxidation