Assignment of Assignor's Interest

Recorded: 2006-08-28 Pages: 3

Assignors

SUMIYA, SHIGEAKI

Executed: 2006-08-09

SHIBATA, TOMOHIKO

Executed: 2006-08-09

MIYASHITA, MASAHITO

Executed: 2006-08-09

Assignees

DOWA MINING CO., LTD.

14-1, SOTOKANDA, 4-CHOME, CHIYODA-KU,, TOKYO, 101-8617, JAPAN

NGK INSULATORS, LTD.

2-56, SUDA-CHO, MIZUHO, NAGOYA-SHI,, AICHI,, 467-8530, JAPAN

Covered Property (1)

Substrate for Film Growth of Group Iii Nitrides, Method of Manufacturing the Same, and Semiconductor Device Using the Same

Application: 11/467,319 →

Publication: US 2007/0045662

Related Assignments (2)

Other recorded transfers of the patent in this record — the chain of ownership.