Assignment of Assignor's Interest

Recorded: 2006-08-14 Pages: 4

Assignor

SHIBATA, TOMOHIKO

Executed: 2006-08-08

Assignees

NGK INSULATORS, LTD.

2-56, SUDA-CHO, MIZUHO-KU, NAGOYA-CITY, AICHI-PREFECTURE 467-8530, JAPAN

DOWA MINING CO., LTD.

22ND FLOOR, AKIHABARA UDX BUILDING, 14-1, SOTOKANDA 4-CHOME, CHIYODA-KU, TOKYO 101-0021, JAPAN

Covered Property (1)

Method of Forming Group-Iii Nitride Crystal, Layered Structure and Epitaxial Substrate

Patent: 7,445,672 →

Application: 11/503,831 →

Publication: US 2007/0042571

Related Assignments (2)

Other recorded transfers of the patent in this record — the chain of ownership.