IP Library Assignment 018662/0310
Patent Assignment
Reel/Frame 018662/0310

Assignment of Assignor's Interest

Recorded: 2006-12-08 Pages: 4
Assignors
TOGO, MITSUHIRO
Executed: 2006-12-04
SUZUKI, TAKAYUKI
Executed: 2006-12-04
Assignee
NEC ELECTRONICS CORPORATION
1753 SHIMONUMABE, NAKAHARA-KU, KAWASAKI, KANAGAWA, 211-8668, JAPAN
Covered Property (1)
Semiconductor Device Having N-Channel Type Mos Transistor with Gate Electrode Layer Featuring Small Average Polycrystalline Silicon Grain Size
Patent: 7,442,632 →
Application: 11/635,505 →
Publication: US 2007/0080393
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Nov 5, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025315/0201 →
Change of Address Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →