Patent Assignment
Reel/Frame 018663/0769
Assignment of Assignor's Interest
Recorded: 2006-12-04
Pages: 3
Assignors
YAMAUCHI, TAKASHI
Executed: 2006-10-10
KINOSHITA, ATSUHIRO
Executed: 2006-10-05
TSUCHIYA, YOSHINORI
Executed: 2006-10-10
KOGA, JUNJI
Executed: 2006-10-10
KATO, KOICHI
Executed: 2006-10-10
AOKI, NOBUTOSHI
Executed: 2006-10-10
OHUCHI, KAZUYA
Executed: 2006-10-10
Assignee
KABUSHIKI KAISHA TOSHIBA
1-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Property
(1)
Method of Manufacturing Silicide Layer for Semiconductor Device