Patent Assignment
Reel/Frame 018927/0248
Assignment of Assignor's Interest
Recorded: 2007-02-15
Pages: 3
Assignor
NAKAMURA, KAZUTOSHI
Executed: 2006-12-12
Assignee
KABUSHIKI KAISHA TOSHIBA
1-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO 105-8001, JAPAN
Covered Property
(1)
Semiconductor Device Having Increased Gate-Source Capacity Provided by Protruding Electrode Disposed Between Gate Electrodes Formed in a Trench