Patent Assignment
Reel/Frame 018980/0719
Assignment of Assignor's Interest
Recorded: 2007-03-08
Pages: 5
Assignees
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)
KAPELDREEF 75, LEUVEN, 3001, BELGIUM
AMERICAN UNIVERSITY CAIRO
113 KASR EL AINI STREET, CAIRO, 11511, EGYPT
Covered Property
(1)
Method for forming silicon germanium layers at low temperatures, layers formed therewith and structures comprising such layers
Application:
11/643,235 →
Publication:
US 2010/0032812
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.