Patent Assignment
Reel/Frame 019101/0152
Assignment of Assignor's Interest
Recorded: 2007-03-14
Pages: 3
Assignor
KANG, HEE BOK
Executed: 2007-02-28
Assignee
HYNIX SEMICONDUCTOR INC.
SAN 136-1, AMI-RI, BUBAL-EUP,, ICHEON-SI, GYEONGGI-DO 467-701, KOREA, REPUBLIC OF
Covered Property
(1)
Nonvolatile Ferroelectric Memory Device Using Silicon Substrate, Method for Manufacturing the Same, and Refresh Method Thereof