IP Library › Assignment 019550/0635
Patent Assignment
Reel/Frame 019550/0635

Assignment of Assignor's Interest

Recorded: 2007-07-13 Pages: 3
Assignor
Assignee
JAPAN SCIENCE AND TECHNOLOGY AGENCY
4-1-8, HONCHO, KAWAGUCHI CITY, SAITAMA PREFECTURE, 332-0012, JAPAN
Covered Properties (2)
Growth of Planar Reduced Dislocation Density M-Plane Gallium Nitride by Hydride Vapor Phase Epitaxy
Patent: 7,208,393 →
Application: 11/140,893 →
Publication: US 2005/0245095
Growth of Planar Reduced Dislocation Density M-Plane Gallium Nitride by Hydride Vapor Phase Epitaxy
Patent: 7,956,360 →
Application: 11/697,457 →
Publication: US 2007/0184637
Related Assignments (2)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Jul 12, 2005
From: HASKELL, BENJAMIN A.; MCLAURIN, MELVIN B.; DENBAARS, STEVEN P.; SPECK, JAMES S.
To: REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE
Reel/Frame 016517/0019 →
Assignment of Assignor's Interest Jul 25, 2008
From: HASKELL, BENJAMIN A.; MCLAURIN, MELVIN B.; DENBAARS, STEVEN P.; SPECK, JAMES S.
To: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Reel/Frame 021296/0219 →