IP Library › Assignment 020136/0710
Patent Assignment
Reel/Frame 020136/0710

Assignment of Assignor's Interest

Recorded: 2007-11-16 Pages: 4
Assignors
LIN, YUNG-FA
Executed: 2007-11-09
WANG, TE-CHUN
Executed: 2007-11-09
Assignees
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
195 CHUNG HSING ROAD, SEC. 4, CHUTUNG, HSINCHU, TAIWAN
POWERCHIP SEMICONDUCTOR CORP.
NO. 12, LI-HSIN RD. I, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, R.O.C., TAIWAN
NANYA TECHNOLOGY CORPORATION
HWA-YA TECHNOLOGY PARK 669, FUHSING 3 RD., KUEISHAN, TAOYUAN, R.O.C., TAIWAN
PROMOS TECHNOLOGIES INC.
3F., NO. 19, LI HSIN RD., SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, R.O.C., TAIWAN
WINBOND ELECTRONICS CORP.
NO. 4, CREATION RD. III, SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, R.O.C., TAIWAN
Covered Property (1)
Phase Change Memory Device and Method for Fabricating the Same
Patent: 7,655,941 →
Application: 11/940,563 →
Publication: US 2008/0290335
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Mar 28, 2010
From: POWERCHIP SEMICONDUCTOR CORP.; NANYA TECHNOLOGY CORPORATION; PROMOS TECHNOLOGIES INC.; WINBOND ELECTRONICS CORP.
To: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Reel/Frame 024149/0102 →