Patent Assignment
Reel/Frame 020311/0059
Assignment of Assignor's Interest
Recorded: 2007-12-28
Pages: 5
Assignor
LEE, IN NO
Executed: 2007-12-17
Assignee
HYNIX SEMICONDUCTOR INC.
SAN 136-1, AMI-RI, BUBAL-EUB, ICHEON-SI, KYOUNGKI-DO, 467-701, KOREA, REPUBLIC OF
Covered Property
(1)
Method of Forming Gate Pattern of Flash Memory Device Including Over Etch with Argon