Patent Assignment
Reel/Frame 020326/0346
Assignment of Assignor's Interest
Recorded: 2008-01-07
Pages: 4
Assignors
JOO, MOON SIG
Executed: 2007-12-14
PYI, SEUNG HO
Executed: 2007-12-14
PARK, KI SEON
Executed: 2007-12-14
CHO, HEUNG JAE
Executed: 2007-12-14
KIM, YONG TOP
Executed: 2007-12-14
Assignee
HYNIX SEMICONDUCTOR, INC.
SAN-136-1, AMI-RI, BUBAL-EUP, GYEONGGI-DO, ICHEON-SI, KOREA, REPUBLIC OF
Covered Property
(1)
Method of Fabricating Non-Volatile Memory Device Having Charge Trapping Layer