IP Library Assignment 020640/0224
Patent Assignment
Reel/Frame 020640/0224

Assignment of Assignor's Interest

Recorded: 2008-03-12 Pages: 3
Assignor
ZOLLNER, STEFAN
Executed: 2008-02-27
Assignee
FREESCALE SEMICONDUCTOR, INC.
6501 WILLIAM CANNON DR., TX30/0E9, AUSTIN, TEXAS, 78735
Covered Property (1)
Method of Forming a Semiconductor Device Having a Stressed Electrode and Silicide Regions
Application: 12/043,372 →
Publication: US 2009/0227099
Related Assignments (6)
Other recorded transfers of the patent in this record — the chain of ownership.
Security Agreement Jul 7, 2008
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A.
Reel/Frame 021194/0593 →
Security Agreement Mar 15, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A.
Reel/Frame 024085/0001 →
Security Agreement May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024397/0001 →
Patent Release Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0688 →
Patent Release Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
Patent Release Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →