Patent Assignment
Reel/Frame 021145/0731
Assignment of Assignor's Interest
Recorded: 2008-06-25
Pages: 4
Assignor
HA, SEUNG-CHUL
Executed: 2008-06-25
Assignee
DONGBU HITEK CO., LTD.
891-10 DAECHI-DONG, GANGNAM-GU, SEOUL, 135-280, KOREA, REPUBLIC OF
Covered Property
(1)
Method of Fabricating Semiconductor High-Voltage Device Comprising the Steps of Using Photolithogrpahic Processes to Form Nitride Spacer Regions and Dry Etch Process to Form Deep Trench Regions
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.