Assignment of Assignor's Interest

Recorded: 2008-07-25 Pages: 2

Assignor

FUJITA, SHUNSUKE

Executed: 2008-06-10

Assignee

5-33 KITAHAMA 4-CHOME, CHUO-KU, OSAKA-SHI, 541-0041, JAPAN

Covered Property (1)

Gallium Nitride Crystal Growth Method, Gallium Nitride Crystal Substrate, Epi-Wafer Manufacturing Method, and Epi-Wafer

Patent: 8,409,350 →

Application: 12/179,587 →

Publication: US 2009/0026417

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.