Patent Assignment
Reel/Frame 065799/0445
Nunc Pro Tunc Assignment
Recorded: 2023-12-07
Pages: 4
Assignor
SUMITOMO ELECTRIC INDUSTRIES, LTD.
Executed: 2023-11-27
Assignee
MITSUBISHI CHEMICAL CORPORATION
1-1, MARUNOUCHI 1-CHOME, CHIYODA-KU, TOKYO, 100-8251, JAPAN
Covered Properties
(7)
Method of Manufacturing Nitride Substrate for Semiconductors, and Nitride Semiconductor Substrate
Nitride Semiconductor Wafer
Method of Storing Gan Substrate, Stored Substrate, and Semiconductor Device and Method of Its Manufacture
Gallium Nitride Crystal Growth Method, Gallium Nitride Crystal Substrate, Epi-Wafer Manufacturing Method, and Epi-Wafer
Method of Manufacturing Iii Nitride Crystal, Iii Nitride Crystal Substrate, and Semiconductor Device
Group Iii Nitride Crystal and Method for Producing the Same
Prepared and Stored Gan Substrate
Related Assignments
(7)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Oct 29, 2004
From: MATSUMOTO, NAOKI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 015317/0521 →
Assignment of Assignor's Interest
Dec 19, 2006
From: MIYANAGA, MICHIMASA; UEMATSU, KOJI; OKAHISA, TAKUJI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 018650/0609 →
Assignment of Assignor's Interest
Jun 14, 2007
From: IJIRI, HIDEYUKI; NAKAHATA, SEIJI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 019433/0052 →
Assignment of Assignor's Interest
Jul 25, 2008
From: FUJITA, SHUNSUKE
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 021289/0096 →
Assignment of Assignor's Interest
May 22, 2009
From: FUJIWARA, SHINSUKE
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 022723/0866 →
Assignment of Assignor's Interest
Mar 12, 2012
From: UEMATSU, KOJI; OSADA, HIDEKI; NAKAHATA, SEIJI; FUJIWARA, SHINSUKE
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 027840/0016 →
Assignment of Assignor's Interest
Jun 3, 2013
From: IJIRI, HIDEYUKI; NAKAHATA, SEIJI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD
Reel/Frame 030536/0709 →