Method of manufacturing nitride substrate for semiconductors, and nitride semiconductor substrate
In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, warp will be a large ±40 μm to ±100 μm. Since with that warp device fabrication by photolithography is challenging, reducing the warp to +30 μm to −20 μm is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the warp. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the warp.
1. A method of manufacturing a nitride semiconductor substrate, the method comprising:
(a) providing a gallium nitride semiconductor substrate having front and back sides, the front side including a (0001) gallium face terminated with gallium atoms, the back side including a (0001) nitrogen face terminated with nitrogen atoms, and the substrate having a warp such that the front side is concave; and
(b) mechanically grinding the front side to induce a damaged layer thereto, the damaged layer effective to extend the front side, thereby reducing (i) the concavity of the front side and (ii) the warp of the substrate.
2. A method of manufacturing a nitride semiconductor substrate, the method comprising:
(a) providing a gallium nitride semiconductor substrate having front and back sides, the front side including a (0001) gallium face terminated with gallium atoms, the back side including a (0001) nitrogen face terminated with nitrogen atoms, and the substrate having a warp such that the front side is concave;
(b) mechanically grinding the front side to induce a damaged layer thereto, the damaged layer effective to extend the front side such that it becomes convex; and
(c) dry-etching the front side to remove at least a portion of the damaged layer, thereby reducing (i) said convexity of the front side and (ii) the warp of the substrate.
3. A method of manufacturing a nitride semiconductor substrate, the method comprising:
(a) providing a gallium nitride semiconductor substrate having front and back sides, the front side including a (0001) gallium face terminated with gallium atoms, the back side including a (0001) nitrogen face terminated with nitrogen atoms, and the substrate having a warp such that the front side is concave;
(b) mechanically grinding the front side to induce a first damaged layer thereto, the first damaged layer effective to extend the front side such that it becomes convex and such that the back side becomes concave;
(c) dry-etching the front side to remove at least a portion of the first damaged layer, thereby reducing said convexity of the front side;
(d) mechanically grinding the back side to induce a second damaged layer thereto, the second damaged layer effective to extend the back side such that it again becomes convex and the front side again becomes concave; and
(e) dry-etching the back side to remove at least a portion of the second damaged layer, thereby reducing the warp of the substrate.
4. A method of manufacturing a nitride semiconductor substrate, the method comprising:
(a) providing a gallium nitride semiconductor substrate having front and back sides, the front side including a (0001) gallium face terminated with gallium atoms, the back side including a 0001 nitrogen face terminated with nitrogen atoms, and the substrate having a warp such that the front side is concave
(b) mechanically grinding the front side to induce a first damaged layer thereto, the first damaged layer effective to extend the front side such that it becomes convex and such that the second face becomes concave;
(c) mechanically grinding the back side to induce a second damaged layer thereto, the second damaged layer effective to extend the back side such that it again becomes convex and the front side again becomes concave; and
(d) etching the back side to remove at least a portion of the second damaged layer, thereby reducing the warp of the substrate.
5. The method of claim 2 , wherein (c) comprises dry-etching the front face with a chlorine plasma to remove at least a portion of the damaged layer.
6. The method of claim 3 , wherein (c) comprises dry-etching the front face with a chlorine plasma to remove at least a portion of the first damaged layer.