IP Library › Assignment 022178/0301
Patent Assignment
Reel/Frame 022178/0301

Assignment of Assignor's Interest

Recorded: 2009-01-22 Pages: 3
Assignors
HAN, SUNG-HEE
Executed: 2008-12-11
LEE, JIN-WOO
Executed: 2008-12-11
CHUNG, TAE-YOUNG
Executed: 2008-12-11
LEE, JA-YOUNG
Executed: 2008-12-11
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416 MAETAN-DONG, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Property (1)
Method of Fabricating Recess Channel Transistor Having Locally Thick Dielectrics and Related Devices
Patent: 7,923,331 →
Application: 12/232,020 →
Publication: US 2009/0127609