Assignment of Assignor's Interest

Recorded: 2009-04-24 Pages: 2

Assignor

PAWLAK, BARTLOMIEJ J.

Executed: 2009-04-23

Assignee

NXP B.V.

HIGH TECH CAMPUS 60, EINDHOVEN, 5656 AG, NETHERLANDS

Covered Property (1)

Semiconductor Substrate with Solid Phase Epitaxial Regrowth with Reduced Depth of Doping Profile and Method of Producing Same

Patent: 8,357,595 →

Application: 10/596,603 →

Publication: US 2009/0256146

Related Assignments (2)

Other recorded transfers of the patent in this record — the chain of ownership.