IP Library › Assignment 023256/0009
Patent Assignment
Reel/Frame 023256/0009

Assignment of Assignor's Interest

Recorded: 2009-09-18 Pages: 5
Assignors
SIGNAMARCHEIX, THOMAS
Executed: 2009-09-01
ALLIBERT, FREDERIC
Executed: 2009-09-02
DEGUET, CHRYSTEL
Executed: 2009-09-01
Assignees
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
PARC TECHNOLOGIQUE DES FONTAINES, F-38190 BERNIN, FRANCE
COMMISSARLAT A L'ENERGIE ATOMIQUE
25, RUE LEBLANC, BATIMENT LE PONANT D, 75015 PARIS, FRANCE
Covered Property (1)
Method for Fabricating a Locally Passivated Germanium-on-Insulator Substrate
Patent: 8,372,733 →
Application: 12/552,891 →
Publication: US 2010/0052104
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Corrective Assignment to Correct the the Incorrect Spelling of Co-Assignee's Name from Commissarlat to Read Commissariat a L'energie Atomique Previously Recorded on Reel 023256 Frame 0009. Assignor(S) Hereby Confirms the Assignor's Interest. Oct 19, 2009
From: SIGNAMARCHEIX, THOMAS; ALLIBERT, FREDERIC; DEGUET, CHRYSTEL
To: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES; COMMISSARIAT A L'ENERGIE ATOMIQUE
Reel/Frame 023387/0634 →
Change of Name Mar 4, 2012
From: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
To: SOITEC
Reel/Frame 027800/0911 →