IP Library › Assignment 023310/0164
Patent Assignment
Reel/Frame 023310/0164

Assignment of Assignor's Interest

Recorded: 2009-10-01 Pages: 3
Assignors
LIN, CHIH-SHENG
Executed: 2009-04-27
HSIAO, CHIH-WEN
Executed: 2009-04-27
SU, KENG-LI
Executed: 2009-04-27
Assignee
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
NO. 195, SEC. 4, CHUNG HSING RD., CHUTUNG,, HSINCHU, 31040, TAIWAN
Covered Property (1)
Electrostatic Discharge Structure for 3-Dimensional Integrated Circuit Through-Silicon via Device
Patent: 8,164,113 →
Application: 12/564,051 →
Publication: US 2010/0237386