IP Library Assignment 023430/0590
Patent Assignment
Reel/Frame 023430/0590

Assignment of Assignor's Interest

Recorded: 2009-10-27 Pages: 3
Assignors
MORI, HIDEMITSU
Executed: 2009-10-22
TAKIMOTO, KAZUHIRO
Executed: 2009-10-22
SHOU, TOSHIYUKI
Executed: 2009-10-22
SASAKI, KENJI
Executed: 2009-10-22
AKIYAMA, YUTAKA
Executed: 2009-10-22
Assignee
NEC ELECTRONICS CORPORATION
1753 SHIMONUMABE, NAKAHARA-KU, KAWASAKI, KANAGAWA, 211-8668, JAPAN
Covered Property (1)
Method of Fabricating Semiconductor Device with a High Breakdown Voltage Between Neighboring Wells
Patent: 8,148,774 →
Application: 12/606,634 →
Publication: US 2010/0102420
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Oct 26, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025193/0138 →
Change of Address Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →