IP Library Assignment 023443/0491
Patent Assignment
Reel/Frame 023443/0491

Assignment of Assignor's Interest

Recorded: 2009-10-29 Pages: 4
Assignors
ISOGAI, HIROMICHI
Executed: 2009-10-09
SENDA, TAKESHI
Executed: 2009-10-09
TOYODA, EIJI
Executed: 2009-10-09
MURAYAMA, KUMIKO
Executed: 2009-10-09
IZUNOME, KOJI
Executed: 2009-10-09
MAEDA, SUSUMU
Executed: 2009-10-16
KASHIMA, KAZUHIKO
Executed: 2009-10-16
ARAKI, KOJI
Executed: 2009-10-13
AOKI, TATSUHIKO
Executed: 2009-10-09
SUDO, HARUO
Executed: 2009-10-09
MOCHIZUKI, YOICHIRO
Executed: 2009-10-13
KOBAYASHI, AKIHIKO
Executed: 2009-10-13
FU, SENLIN
Executed: 2009-10-13
Assignee
COVALENT MATERIALS CORPORATION
6-3, OHSAKI 1-CHOME, SHINAGAWA-KU, TOKYO, 141-0032, JAPAN
Covered Property (1)
Method of Manufacturing Single Crystal Silicon Wafer from Ingot Grown by Czocharlski Process with Rapid Heating/Cooling Process
Patent: 8,476,149 →
Application: 12/512,492 →
Publication: US 2010/0038757
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Mar 11, 2013
From: COVALENT MATERIALS CORPORATION
To: COVALENT SILICON CORPORATION
Reel/Frame 029962/0497 →
Change of Name Mar 13, 2013
From: COVALENT SILICON CORPORATION
To: GLOBALWAFERS JAPAN CO., LTD.
Reel/Frame 029991/0421 →