IP Library Assignment 023800/0441
Patent Assignment
Reel/Frame 023800/0441

Assignment of Assignor's Interest

Recorded: 2010-01-18 Pages: 3
Assignors
OMURA, HIDEYUKI
Executed: 2009-10-15
HAYASHI, RYO
Executed: 2009-10-15
Assignee
CANON KABUSHIKI KAISHA
30-2, SHIMOMARUKO 3-CHOME, OHTA-KU, TOKYO, 146-8501, JAPAN
Covered Property (1)
Manufacturing Method of Thin Film Transistor Using Oxide Semiconductor
Patent: 8,193,045 →
Application: 12/597,989 →
Publication: US 2010/0140612