Corrective Assignment to Correct the Title of the Invention Previously Recorded on Reel 022998 Frame 0927. Assignor(S) Hereby Confirms the Correct Title of the Invention Is --Process for Production of Silicon Single Crystal, and Silicon Single Crystal Substrate--..

Recorded: 2010-03-02 Pages: 7

Assignors

KAWAZOE, SHINICHI

Executed: 2009-01-15

KUBOTA, TOSHIMICHI

Executed: 2009-01-21

NARUSHIMA, YASUHITO

Executed: 2009-01-21

OGAWA, FUKUO

Executed: 2009-01-21

Assignee

SUMCO TECHXIV CORPORATION

1324-2, MASURAGAHARA-MACHI, OMURA-SHI, NAGASAKI, 856-8555, JAPAN

Covered Property (1)

Process for Production of Silicon Single Crystal.

Patent: 8,043,428 →

Application: 12/524,303 →

Publication: US 2010/0133485

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.