Assignment of Assignor's Interest

Recorded: 2010-03-05 Pages: 6

Assignors

IKENO, DAISUKE

Executed: 2010-01-13

NAKAJIMA, KAZUAKI

Executed: 2010-01-15

IIZUKA, TOSHIHIRO

Executed: 2010-01-28

MANABE, KENZO

Executed: 2010-01-12

YAMAMOTO, ICHIRO

Executed: 2010-01-12

Assignees

KABUSHIKI KAISHA TOSHIBA

1-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, 105-8001, JAPAN

NEC ELECTRONICS CORPORATION

1753, SHIMONUMABE, NAKAHARA-KU, KAWASAKI, KANAGAWA, 211-8668, JAPAN

Covered Property (1)

Semiconductor Device Including a Mosfet Having a Gate Structure Including a Metal Gate Electrode and a Gate Insulating Film Including Hafnium

Application: 12/683,050 →

Publication: US 2010/0176456

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.