Patent Assignment
Reel/Frame 024114/0890
CORRECTIVE ASSIGNMENT TO CORRECT THE EXHIBIT A, FILING DATE OF US PATENT 5660952 AND GRANT DATE OF US PATENT 7510806 PREVIOUSLY RECORDED ON REEL 024023 FRAME 0229. ASSIGNOR(S) HEREBY CONFIRMS THE 8/4/1995 (FILING DATE) FOR US PATENT 5660952 AND 3/31/2009(GRANT DATE) FOR US PATENT 7510806.
Recorded: 2010-03-23
Received: 2010-03-23
Pages: 6
Assignor
SANYO ELECTRIC CO., LTD.
Executed: 2010-01-12
Assignee
FDK CORPORATION
5-36-11 SHINBASHI, MINATO-KU, TOKYO, JPX, JAPAN
Covered Applications
(15)
HYDROGEN-ABSORBING ALLOY FOR ALKALINE STORAGE BATTERY, METHOD OF MANUFACTURING THE SAME, AND ALKALINE STORAGE BATTERY
App. No. 11/041,678
→
CYLINDRICAL ALKALINE STORAGE BATTERY
App. No. 10/909,363
→
LITHIUM SECONDARY BATTERY INCLUDING A LITHIUM BIS(TRIFLUOROMETHYLSULFONYL)IMIDE ELECTROLYTE AND A GLASS FIBER SEPARATOR
App. No. 10/841,823
→
HERMETICALLY SEALED BATTERY
App. No. 10/792,908
→
HEAT RESISTANT LITHIUM CELL
App. No. 10/785,970
→
COIN TYPE ELECTRIC ELEMENT AND PRINTED CIRCUIT BOARD WITH A COIN TYPE ELECTRIC ELEMENT
App. No. 10/412,584
→
Lithium secondary battery for mounting on substrate
App. No. 10/369,596
→
NICKEL-HYDROGEN STORAGE BATTERY AND METHOD OF PRODUCING THE SAME
App. No. 10/246,545
→
CAPACITOR WITH HIGH-EPSILON DIELECTRIC OR FERROELECTRIC MATERIAL BASED ON THE FIN STACK PRINCIPLE
App. No. 09/863,925
→
Magnetoresistive memory having elevated interference immunity
App. No. 09/821,964
→
MAGNETORESISTIVE MEMORY WITH A LOW CURRENT DENSITY
App. No. 09/822,019
→
DECODER ELEMENT FOR GENERATING AN OUTPUT SIGNAL HAVING THREE DIFFERENT POTENTIALS AND AN OPERATING METHOD FOR THE DECODER ELEMENT
App. No. 09/822,028
→
Integrated memory having a differential sense amplifier
App. No. 09/820,235
→
SELECTIVELY DEACTIVATING A FIRST CONTROL LOOP IN A DUAL CONTROL LOOP CIRCUIT DURING DATA TRANSMISSION
App. No. 09/811,881
→
MAGNETORESISTIVE ELEMENT AND USE THEREOF AS A MEMORY ELEMENT IN A MEMORY CELL CONFIGURATION
App. No. 09/801,210
→