Patent Assignment
Reel/Frame 024122/0988
Assignment of Assignor's Interest
Recorded: 2010-03-23
Pages: 4
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416 MAETAN-DONG, YEONGTONG-DONG, SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Property
(1)
Methods of Forming P-Channel Field Effect Transistors Having Sige Source/Drain Regions
Related Assignments
(5)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Mar 23, 2010
From: LAI, CHUNG WOH
To: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
Reel/Frame 024123/0075 →
Assignment of Assignor's Interest
Mar 23, 2010
From: UTOMO, HENRY K.; DYER, THOMAS W.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 024123/0132 →
Assignment of Assignor's Interest
May 20, 2010
From: HAN, JIN-PING
To: INFINEON TECHNOLOGIES NORTH AMERICA CORP.
Reel/Frame 024414/0117 →
Assignment of Assignor's Interest
May 20, 2010
From: INFINEON TECHNOLOGIES NORTH AMERICA CORP.
To: INFINEON TECHNOLOGIES AG
Reel/Frame 024416/0366 →
Corrective Assignment to Correct the Assignor Execution Date of 02-03-2010 for Jong Ho Yang, and Correct the Assignee Address Yeongtong-Dong Previously Recorded on Reel 024122 Frame 0988. Assignor(S) Hereby Confirms the Execution Date for Assignor Jong Ho Yang Is 02-03-2009, and the Assignee Address Is Yeongtong-Gu..
Jun 17, 2010
From: YANG, JONG HO; LEE, HYUNG-RAE
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 024550/0693 →