IP Library Assignment 024139/0270
Patent Assignment
Reel/Frame 024139/0270

Assignment of Assignor's Interest

Recorded: 2010-03-25 Pages: 4
Assignors
ENDOH, TETSUO
Executed: 2010-01-18
KOHNO, MASAYUKI
Executed: 2010-01-18
NISHITA, TATSUO
Executed: 2010-01-18
HONDA, MINORU
Executed: 2010-01-18
NAKANISHI, TOSHIO
Executed: 2010-01-18
HIROTA, YOSHIHIRO
Executed: 2010-01-18
Assignees
TOHOKU UNIVERSITY
1-1, KATAHIRA 2-CHOME, AOBA-KU, SENDAI-SHI, MIYAGI, 980-8577, JAPAN
TOKYO ELECTRON LIMITED
3-1, AKASAKA 5-CHOME, MINATO-KU, TOKYO, 107-6325, JAPAN
Covered Property (1)
Mos Semiconductor Memory Device Having Charge Storage Region Formed from Stack of Insulating Films
Patent: 8,258,571 →
Application: 12/665,534 →
Publication: US 2010/0283097
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Jan 8, 2016
From: TOKYO ELECTRON LIMITED; TOHOKU UNIVERSITY
To: TOHOKU UNIVERSITY
Reel/Frame 037443/0483 →