Assignment of Assignor's Interest

Recorded: 2010-04-05 Received: 2010-04-05 Pages: 390

Assignor

INFINEON TECHNOLOGIES AG

Executed: 2006-04-25

Assignee

QIMONDA AG

GUSTAV-HEINEMANN-RING 212, MUNICH, DEX, 81739, GERMANY

Covered Properties (9)

Method of Producing an Integrated Circuit Configuration

Application: 09/976,233 →

Mos Transistor in a Single-Transistor Memory Cell Having a Locally Thickened Gate Oxide

Application: 09/885,553 →

Apparatus for Treating Wastewater from a Chemical-Mechanical Polishing Process Used in Chip Fabrication

Application: 09/829,871 →

Magnetoresistive Element and the Use Thereof as Storage Element in a Storage Cell Array

Application: 09/806,617 →

Microelectronic Memory Cell Structure with a Layer of Tin Having N:Ti

Application: 09/796,208 →

Method of Repairing Defective Memory Cells of an Integrated Memory

Application: 09/793,789 →

Integrated circuit with electrical connection points that can be severed by the action of enegry

Application: 09/776,954 →

Method for Fabricating a Memory Cell

Application: 09/773,218 →

Integrated Circuit Having a Self-Test Device for Carrying Out a Self-Test of the Integrated Circuit

Application: 09/767,393 →