Patent Assignment
Reel/Frame 024411/0724
Assignment of Assignor's Interest
Recorded: 2010-05-20
Received: 2010-05-20
Pages: 4
Assignor
SILICON SEMICONDUCTOR CORPORATION
Executed: 2010-02-11
Assignee
SILICON PATENT HOLDING, INC.
WACHOVIA CAPITOL CENTER, 150 FAYETTEVILLE STREET, SUITE 1400, C/O WILLIAM G. PAPPAS, ESQ., PARKER POE ADAMS & BERNSTEIN LLP, RALEIGH, NC, 27601, UNITED STATES
Covered Properties
(12)
Methods of Forming Power Semiconductor Devices Having Laterally Extending Base Shielding Regions
Application:
10/936,757 →
Integrated Circuit Power Devices Having Junction Barrier Controlled Schottky Diodes Therein
Application:
10/671,333 →
Photograph Display Device
Application:
29/188,838 →
Methods of Forming Vertical Mosfets Having Trench-Based Gate Electrodes Within Deeper Trench-Based Source Electrodes
Application:
10/621,668 →
Replacement caulking tube nozzle
Application:
10/407,707 →
Vertical Power Devices Having Retrograded-Doped Transition Regions Therein
Application:
10/199,583 →
Vertical Mosfets Having Trench-Based Gate Electrodes Within Deeper Trench-Based Source Electrodes and Methods of Forming Same
Application:
09/995,019 →
Vertical Power Devices Having Insulated Source Electrodes in Discontinuous Deep Trenches
Application:
09/991,838 →
Packaged Power Devices Having Vertical Power Mosfets Therein That Are Flip-Chip Mounted to Slotted Gate Electrode Strip Lines
Application:
09/992,233 →
Power Semiconductor Devices Having Laterally Extending Base Shielding Regions That Inhibit Base Reach-Through
Application:
10/008,171 →
Method for an Alarm Event Generator
Application:
09/950,974 →
Power Devices Having Retrograded-Doped Transition Regions and Insulated Trench-Based Electrodes Therein
Application:
09/833,132 →