Patent Assignment
Reel/Frame 024411/0728
Assignment of Assignor's Interest
Recorded: 2010-05-20
Received: 2010-05-20
Pages: 5
Assignor
SILICON SEMICONDUCTOR CORPORATION
Executed: 2010-02-11
Assignee
SILICON PATENT HOLDINGS, INC.
150 FAYETTEVILLE STREET, SUITE 1400, WACHOVIA CAPITOL CENTER, C/O WILLIAM G. PAPPAS, ESQ, PARKER POE ADAMS & BERNSTEIN LLP, RALEIGH, NC, 27601, UNITED STATES
Covered Properties
(14)
Methods of Forming Power Semiconductor Devices Having Laterally Extending Base Shielding Regions
Application:
10/936,757 →
Nerve-Branch-Specific Action-Potential Activation,Inhibition, and Monitoring
Application:
10/745,514 →
Integrated Circuit Power Devices Having Junction Barrier Controlled Schottky Diodes Therein
Application:
10/671,333 →
Methods of Forming Vertical Mosfets Having Trench-Based Gate Electrodes Within Deeper Trench-Based Source Electrodes
Application:
10/621,668 →
Vertical Power Devices Having Retrograded-Doped Transition Regions Therein
Application:
10/199,583 →
Actuator with a Centrifugal Brake
Application:
10/117,454 →
Vertical Mosfets Having Trench-Based Gate Electrodes Within Deeper Trench-Based Source Electrodes and Methods of Forming Same
Application:
09/995,019 →
Vertical Power Devices Having Insulated Source Electrodes in Discontinuous Deep Trenches
Application:
09/991,838 →
Packaged Power Devices Having Vertical Power Mosfets Therein That Are Flip-Chip Mounted to Slotted Gate Electrode Strip Lines
Application:
09/992,233 →
Actuating Drive with a Housing with Sealing Means
Application:
10/000,521 →
Power Semiconductor Devices Having Laterally Extending Base Shielding Regions That Inhibit Base Reach-Through
Application:
10/008,171 →
Apparatus and Method of Detecting the Room Temperature by Means of Sound Waves
Application:
09/957,769 →
Changeable Machine Readable Assaying Indicia
Application:
09/852,872 →
Power Devices Having Retrograded-Doped Transition Regions and Insulated Trench-Based Electrodes Therein
Application:
09/833,132 →