Assignment of Assignor's Interest

Recorded: 2010-06-11 Pages: 6

Assignors

LIM, SE-YUN

Executed: 2010-06-08

OH, SANG-HYUN

Executed: 2010-06-08

KIM, GYO-JI

Executed: 2010-06-08

CHOI, EUN-SEOK

Executed: 2010-06-08

Assignee

HYNIX SEMICONDUCTOR, INC.

SAN 136-1, AMI-RI, BUBAL-EUP, ICHEON-SI, GYEONGGI-DO, 467-701, KOREA, REPUBLIC OF

Covered Property (1)

A Non-Volatile Memory Device Having Three- Dimensional, Vertical Channel, Alternately Stacked Gate Electrode Structure

Application: 12/814,009 →

Publication: US 2010/0314678