Patent Assignment
Reel/Frame 024556/0231
Assignment of Assignor's Interest
Recorded: 2010-06-18
Pages: 3
Assignee
UNITED MICROELECTRONICS CORP.
NO.3, LI-HSIN ROAD 2, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU CITY, TAIWAN
Covered Property
(1)
Nonvolatile Memory Device with a High-K Charge Storage Layer Having a U-Shaped,Cross-Sectional Structure and Manufacturing Method Thereof