Patent Assignment
Reel/Frame 024617/0625
Assignment of Assignor's Interest
Recorded: 2010-06-30
Pages: 2
Assignee
HYNIX SEMICONDUCTOR, INC.
SAN 136-1, AMI-RI, BUBAL-EUP, ICHEON-SI, GYEONGGI-DO, 467-701, KOREA, REPUBLIC OF
Covered Property
(1)
Method for Fabricating Semiconductor Device with Vertical Transistor Having a Second Active Pillar Formed Over a First Active Pillar