Patent Assignment
Reel/Frame 025149/0357
Assignment of Assignor's Interest
Recorded: 2010-10-18
Pages: 4
Assignors
YAMAZAKI, SHUNPEI
Executed: 2010-10-01
SUZUKI, KUNIHIKO
Executed: 2010-10-01
TAKAHASHI, MASAHIRO
Executed: 2010-10-01
Assignee
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
398, HASE, ATSUGI-SHI, KANAGAWA-KEN, 243-0036, JAPAN
Covered Property
(1)
Method for Manufacturing an Oxide-Based Semiconductor Thin Film Transistor (Tft) Including Out Diffusing Hydrogen or Moisture from the Oxide Semiconductor Layer into an Adjacent Insulating Layer Which Contains a Halogen Element.