Patent Assignment
Reel/Frame 025167/0829
Assignment of Assignor's Interest
Recorded: 2010-10-20
Pages: 3
Assignee
NATIONAL SEMICONDUCTOR CORPORATION
2900 SEMICONDUCTOR DRIVE, M/S D3-579, SANTA CLARA, CALIFORNIA, 95051-8090
Covered Property
(1)
A Group Iii-Nitride Hemt Having a Well Region Formed on the Surface of Substrate and Contacted the Buffer Layer to Increase Breakdown Voltage and the Method for Forming the Same.