IP Library › Assignment 025338/0461
Patent Assignment
Reel/Frame 025338/0461

Assignment of Assignor's Interest

Recorded: 2010-11-09 Pages: 7
Assignors
LEE, JONGWON
Executed: 2010-10-19
YOON, BOUN
Executed: 2010-10-19
HAN, SANG YEOB
Executed: 2010-10-19
KIM, CHAE LYOUNG
Executed: 2010-10-19
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416 MAETAN-DONG, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Property (1)
Methods of Forming Cmos Transistors with High Conductivity Gate Electrodes
Patent: 8,252,675 →
Application: 12/942,763 →
Publication: US 2011/0136313