Patent Assignment
Reel/Frame 025370/0001
Assignment of Assignor's Interest
Recorded: 2010-11-16
Pages: 4
Assignee
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
PARC TECHNOLOGIQUE DES FONTAINES, F-38190 BERNIN, FRANCE
Covered Property
(1)
METHOD OF CONTROLLING A DRAM MEMORY CELL ON THE SeOI HAVING A SECOND CONTROL GATE BURIED UNDER THE INSULATING LAYER
Application:
12/898,230 →
Publication:
US 2011/0134690
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.