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Semiconductor Memory Device

Recessed Gate Electrode Mos Transistors Having a Substantially Uniform Channel Length Across a Width of the Recessed Gate Electrode and Methods of Forming Same

Integrated Circuit Chip Having Anti-Moisture-Absorption Film at Edge Thereof and Method of Forming Anti-Moisture-Absorption Film

Memory Cell Decoder Not Including a Charge Pump

Trench Isolatoin Regions Having Trench Liners with Recessed Ends

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Sdram Having Posted Cas Function

Semiconductor memory device having operation delay function of column address strobe command, and buffer and signal transmission circuit which are applied to the semiconductor memory device