IP Library Assignment 025745/0212
Patent Assignment
Reel/Frame 025745/0212

Assignment of Assignor's Interest

Recorded: 2011-02-04 Pages: 4
Assignors
HAFEZ, WALID M.
Executed: 2011-01-13
RAHMAN, ANISUR
Executed: 2011-01-13
JAN, CHIA-HONG
Executed: 2011-01-13
Assignee
INTEL CORPORATION
2200 MISSION COLLEGE BLVD., SANTA CLARA, CALIFORNIA, 95052
Covered Property (1)
Memory Cell Using Bti Effects in High-K Metal Gate Mos
Patent: 8,432,751 →
Application: 12/976,630 →
Publication: US 2012/0163103
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Sep 17, 2023
From: INTEL CORPORATION
To: INTEL NDTM US LLC
Reel/Frame 064928/0832 →