IP Library › Assignment 026283/0175
Patent Assignment
Reel/Frame 026283/0175

Assignment of Assignor's Interest

Recorded: 2011-05-16 Pages: 6
Assignors
UETA, YOSHIHIRO
Executed: 2011-05-10
OHTA, MASATAKA
Executed: 2011-05-10
AOYAGI, YOSHINOBU
Executed: 2011-05-12
TAKEUCHI, MISAICHI
Executed: 2011-05-11
Assignees
THE RITSUMEIKAN TRUST
1-7, NISHINOKYOTOGANOO-CHO, NAKAGYO-KU, KYOTO-SHI, KYOTO, 604-8520, JAPAN
SHARP KABUSHIKI KAISHA
22-22, NAGAIKE-CHO, ABENO-KU, OSAKA-SHI, OSAKA, 545-8522, JAPAN
Covered Property (1)
Semiconductor Device Having Aluminum Nitride Layer with Void Formed Therein
Patent: 8,698,168 →
Application: 13/039,978 →
Publication: US 2012/0007039