IP Library › Assignment 026651/0175
Patent Assignment
Reel/Frame 026651/0175

Assignment of Assignor's Interest

Recorded: 2011-07-26 Pages: 4
Assignors
HWANG, SUNG-MIN
Executed: 2011-07-08
KIM, HAN-SOO
Executed: 2011-07-08
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416 MAETAN-DONG, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Property (1)
Vertical Structure Non-Volatile Memory Device Having Insulating Regions That Are Formed as Air Gaps Between Selection Transistors of Adjacent Memory Cell Strings
Patent: 9,070,587 →
Application: 13/190,932 →
Publication: US 2012/0032245