IP Library › Assignment 026929/0982
Patent Assignment
Reel/Frame 026929/0982

Assignment of Assignor's Interest

Recorded: 2011-09-19 Pages: 4
Assignors
HAN, KYU-HEE
Executed: 2011-09-14
AHN, SANG-HOON
Executed: 2011-09-14
LEE, JANG-HEE
Executed: 2011-09-14
BAE, JONG-MIN
Executed: 2011-09-14
KIM, KYOUNG-HEE
Executed: 2011-09-14
PARK, BYUNG-LYUL
Executed: 2011-09-14
KIM, BYUNG-HEE
Executed: 2011-09-14
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416, MAETAN-DONG, YEONGTONG-GU,, SUWON-SI, GYEONGGI-DO,, 442-742, KOREA, REPUBLIC OF
Covered Property (1)
Method of Forming Through Silicon via of Semiconductor Device Using Low-K Dielectric Material
Patent: 8,426,308 →
Application: 13/235,717 →
Publication: US 2012/0094437