Patent Assignment
Reel/Frame 026946/0317
Assignment of Assignor's Interest
Recorded: 2011-09-22
Pages: 3
Assignors
KIM, JIN-BUM
Executed: 2011-08-02
KIM, CHUL-SUNG
Executed: 2011-08-02
LEE, SANG-WOO
Executed: 2011-08-02
SHIN, YU-GYUN
Executed: 2011-08-02
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416, MAETAN-DONG, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Property
(1)
Fabricating Method of Metal Silicide Layer, Fabricating Method of Semiconductor Device Using the Same and Semiconductor Device Fabricated Using the Method