IP Library › Assignment 027206/0952
Patent Assignment
Reel/Frame 027206/0952

Assignment of Assignor's Interest

Recorded: 2011-11-10 Pages: 7
Assignors
HUANG, YUN-PEI
Executed: 2011-10-20
CHANG, YI-FENG
Executed: 2011-09-26
LEE, JAM-WEM
Executed: 2011-09-26
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
NO. 8, LI-HSIN RD. 6, HSIN-CHU SCIENCE PARK, HSIN-CHU, 300-77, TAIWAN
Covered Property (1)
High-Voltage Mosfets Having Current Diversion Region in Substrate Near Fieldplate
Patent: 8,541,848 →
Application: 13/271,342 →
Publication: US 2013/0093010