IP Library Assignment 027444/0099
Patent Assignment
Reel/Frame 027444/0099

Assignment of Assignor's Interest

Recorded: 2011-12-23 Pages: 13
Assignor
PICOGIGA INTERNATIONAL
Executed: 2006-03-30
Assignee
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
PARC TECHNOLOGIQUE DES FONTAINES, CHEMIN DES FRANQUES, 38190 BERNIN, FRANCE
Covered Property (1)
Method for Manufacturing a Layer of Gallium Nitride or Gallium and Aluminum Nitride
Patent: 8,283,673 →
Application: 13/313,522 →
Publication: US 2012/0074427
Related Assignments (5)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Dec 23, 2011
From: LAHRECHE, HACENE
To: PICOGIGA
Reel/Frame 027444/0149 →
Assignment by Judgment Mar 1, 2012
From: PICOGIGA
To: PICOGIGA INTERNATIONAL
Reel/Frame 027787/0568 →
Change of Name Mar 4, 2012
From: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
To: SOITEC
Reel/Frame 027800/0911 →
Change of Name Aug 12, 2014
From: PICOGIGA INTERNATIONAL
To: SOITEC SPECIALTY ELECTRONICS
Reel/Frame 033520/0702 →
Assignment of Assignor's Interest Aug 14, 2014
From: SOITEC SPECIALTY ELECTRONICS
To: SOITEC
Reel/Frame 033538/0104 →