Patent Assignment
Reel/Frame 027462/0329
Assignment of Assignor's Interest
Recorded: 2011-12-30
Pages: 3
Assignee
HYNIX SEMICONDUCTOR INC.
SAN 136-1, AMI-RI, BUBAL-EUB, ICHEON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Property
(1)
Program Method of Nonvolatile Memory Device for Having Dense Threshold Voltage Distribution by Controlling Voltage of Bit Line According to Threshold Voltage of Memroy Cell.